The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2023

Filed:

Mar. 03, 2020
Applicant:

Kaneka Corporation, Osaka, JP;

Inventors:

Kunta Yoshikawa, Settsu, JP;

Hisashi Uzu, Settsu, JP;

Assignee:

KANEKA CORPORATION, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 31/0216 (2014.01); H01L 31/075 (2012.01); H01L 31/20 (2006.01);
U.S. Cl.
CPC ...
H01L 31/022441 (2013.01); H01L 31/02167 (2013.01); H01L 31/075 (2013.01); H01L 31/202 (2013.01);
Abstract

A solar cell in which performance degradation caused by an alkali component is suppressed. A solar cell is a back-contact solar cell that comprises a semiconductor substrate; a p-type semiconductor layer, and a first electrode layer corresponding thereto, layered sequentially on one part of the rear side of the semiconductor substrate; an n-type semiconductor layer, and a second electrode layer corresponding thereto, layered sequentially on another part of the rear side of the semiconductor substrate. One part of the n-type semiconductor layer lies directly atop one part of the adjacent p-type semiconductor layer. The first electrode layer is separate from the n-type semiconductor layer and covers the p-type semiconductor layer. The second electrode layer covers the entirety of an overlapping portion where the n-type semiconductor layer lies atop the p-type semiconductor layer.


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