The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2023

Filed:

Aug. 19, 2021
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

SeHee Park, Paju-si, KR;

JungSeok Seo, Paju-si, KR;

PilSang Yun, Paju-si, KR;

Jeyong Jeon, Paju-si, KR;

Jaeyoon Park, Paju-si, KR;

ChanYong Jeong, Paju-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/49 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 29/24 (2013.01); H01L 29/4908 (2013.01); H01L 29/66742 (2013.01);
Abstract

A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.


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