The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2023
Filed:
Feb. 22, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Woo Bin Song, Hwaseong-si, KR;
Abstract
Semiconductor devices having improved electrical characteristics are described, as are methods of fabricating the same. The semiconductor device may include a first gate electrode on a substrate and extending in a first direction, a second gate electrode on the substrate and running across the first gate electrode while extending in a second direction, and a channel structure between the second gate electrode and lateral surfaces in the second direction of the first gate electrode and between the second gate electrode and a top surface of the first gate electrode. The channel structure may include a first dielectric layer that covers in contact with the lateral surfaces and the top surface of the first gate electrode; a second dielectric layer on the first dielectric layer and in contact with the second gate electrode; and a channel layer between the first dielectric layer and the second dielectric layer.