The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2023
Filed:
May. 08, 2018
Vertical metal oxide semiconductor field effect transistor (mosfet) and a method of forming the same
C2amps Ab, Limhamn, SE;
Lars-Erik Wernersson, Lund, SE;
Olli-Pekka Kilpi, Lund, SE;
C2AMPS AB, Limhamn, SE;
Abstract
A vertical metal oxide semiconductor field effect transistor (MOSFET) and a method for forming a vertical MOSFET is presented. The MOSFET comprises: a top contact; a bottom contact; a nanowire () forming a charge transport channel between the top contact and the bottom contact; and a wrap-around gate () enclosing the nanowire () circumference, the wrap-around gate () having an extension spanning over a portion of the nanowire () in a longitudinal direction of the nanowire (), wherein the wrap-around gate () comprises a gate portion () and a field plate portion () for controlling a charge transport in the charge transport channel, and wherein the field plate portion () is arranged at a first radial distance () from the center of the nanowire () and the gate portion () is arranged at a second radial distance () from the center of the nanowire (); characterized in that the first radial distance () is larger than the second radial distance ().