The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2023
Filed:
Aug. 31, 2018
Panasonic Corporation, Kadoma, JP;
PANASONIC HOLDINGS CORPORATION, Kadoma, JP;
Abstract
A nitride semiconductor device includes a substrate; a first nitride semiconductor layer above the substrate; a block layer above the first nitride semiconductor layer; a first opening penetrating through the block layer; an electron transit layer and an electron supply layer provided sequentially above the block layer and along an inner surface of the first opening; a gate electrode provided above the electron supply layer to cover the first opening; a second opening penetrating through the electron supply layer and the electron transit layer; a source electrode provided in the second opening; and a drain electrode. When the first main surface is seen in a plan view, (i) the first opening and the source electrode each are elongated in a predetermined direction, and (ii) at least part of an outline of a first end of the first opening in a longitudinal direction follows an arc or an elliptical arc.