The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2023
Filed:
Jul. 29, 2021
Fuji Electric Co., Ltd., Kawasaki, JP;
Yasuyuki Hoshi, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A main semiconductor device element is SiC-MOSFETs with a trench gate structure, the main semiconductor device element having main MOS regions responsible for driving the MOSFETs and main SBD regions that are regions responsible for SBD operation. The main MOS regions and the main SBD regions are adjacent to one another and each pair of a main MOS region and a main SBD region adjacent thereto share one trench. In the main SBD regions, first and second p-type regions, and Schottky electrodes at the front surface of the semiconductor substrate and forming Schottky junctions with an n-type drift region are provided. The first p-type regions are provided along sidewalls of the trenches, in contact with the first p-type regions at the bottoms of the trenches. The second p-type regions are provided between the first p-type regions and the Schottky electrodes, and are electrically connected to these regions.