The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2023
Filed:
May. 29, 2020
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Ashim Dutta, Menands, NY (US);
Saumya Sharma, Easton, CT (US);
Tianji Zhou, Albany, NY (US);
Chih-Chao Yang, Glenmont, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/02 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/222 (2013.01); H01L 43/02 (2013.01); H01L 43/12 (2013.01);
Abstract
A technique relates to an integrated circuit (IC). Pillars of a set of memory elements are formed. A bilayer dielectric is formed between the pillars, the bilayer dielectric having an upper dielectric material formed on a lower dielectric material without requiring an etch of the lower dielectric material prior to forming the upper dielectric material, thereby preventing a void in the bilayer dielectric, the lower dielectric material including one or more flowable dielectric materials.