The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2023

Filed:

Jun. 08, 2018
Applicant:

Sony Semiconductor Solutions Corporation, Tokyo, JP;

Inventors:

Nobuhiro Kawai, Kanagawa, JP;

Hideaki Togashi, Nagasaki, JP;

Fumihiko Koga, Kanagawa, JP;

Tetsuji Yamaguchi, Kanagawa, JP;

Shintarou Hirata, Tokyo, JP;

Taiichiro Watanabe, Kanagawa, JP;

Yoshihiro Ando, Nagasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14638 (2013.01); H01L 27/14603 (2013.01); H01L 27/14627 (2013.01); H01L 27/1462 (2013.01);
Abstract

A solid-state imaging element includes a pixel including a first imaging element, a second imaging element, a third imaging element, and an on-chip micro lens. The first imaging element includes a first electrode, a third electrode, and a second electrode. The pixel further includes a third electrode control line VOA connected to the third electrodeand a plurality of control linesB connected to various transistors included in the second and third imaging elements and different from the third electrode control line VOA. In the pixel, a distance between the center of the on-chip micro lensincluded in the pixel and any one of the plurality of control linesB included in the pixel is shorter than a distance between the center of the on-chip micro lensincluded in the pixel and the third electrode control line VOA included in the pixel.


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