The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2023
Filed:
May. 31, 2022
Applicant:
Peter Hugh Blair, Manchester, GB;
Inventor:
Peter Hugh Blair, Manchester, GB;
Assignee:
Diodes Incorporated, Plano, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/82 (2006.01); H01L 21/8249 (2006.01); H01L 27/06 (2006.01); H01L 21/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/8249 (2013.01); H01L 21/041 (2013.01); H01L 21/046 (2013.01); H01L 21/0455 (2013.01); H01L 27/0623 (2013.01);
Abstract
This application provides a process for making a circuit of a bipolar junction transistor (BJT). The switchable short in one implementation of the invention is formed in a semiconductor wafer. A collector region is formed in the semiconductor wafer and inside of the collector region, a first base region is formed. An emitter region is formed inside the base region to form the BJT. A drain region is also formed inside the base region adjacent to the emitter region. A gate is formed over a portion of the base region adjacent to the drain region and the emitter region. The gate is connected to the collection region.