The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2023
Filed:
Nov. 10, 2021
Applicant:
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Inventors:
Wei-Yu Lin, Hsinchu, TW;
Shih-Hao Cheng, Hsinchu, TW;
Assignee:
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/30 (2006.01); H05K 1/18 (2006.01); H05K 3/30 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01G 4/306 (2013.01); H01L 28/75 (2013.01); H01L 28/91 (2013.01); H01L 28/92 (2013.01); H05K 1/181 (2013.01); H05K 3/303 (2013.01); H05K 2201/10015 (2013.01); Y10T 29/43 (2015.01);
Abstract
A capacitor unit formed by a capacitor integrated structure is provided. The capacitor integrated structure is cut to form capacitor units separated from each other, and each of the capacitor units includes: a substrate; an isolation layer located on the substrate; a capacitor stacked structure located on the isolation layer, wherein the isolation layer electrically isolates the substrate from the capacitor stacked structure; and two electrode connectors located on the capacitor stacked structure and being exposed.