The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2023

Filed:

Mar. 06, 2020
Applicant:

University of Central Florida Research Foundation, Inc., Orlando, FL (US);

Inventors:

Debashis Chanda, Oviedo, FL (US);

Sayan Chandra, Orlando, FL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/01 (2006.01); G02F 1/1524 (2019.01); F41H 3/00 (2006.01); G02F 1/21 (2006.01); H01Q 17/00 (2006.01);
U.S. Cl.
CPC ...
G02F 1/0147 (2013.01); F41H 3/00 (2013.01); G02F 1/1524 (2019.01); G02F 1/213 (2021.01); G02F 2202/09 (2013.01); G02F 2202/10 (2013.01); G02F 2203/10 (2013.01); H01Q 17/005 (2013.01);
Abstract

An active IR camouflage device may include a base layer, a first dielectric layer over the base layer, a phase transition material layer over the first dielectric layer, a second dielectric layer over the phase transition material layer, and a first metal layer over the second dielectric layer and defining a pattern of openings therein. The active IR camouflage device may have circuitry configured to selectively cause a transition from a first phase state to a second phase state of the phase transition material layer to control IR reflectance/emission of a top plasmonic layer, making it appear/disappear from the IR detector/camera. In some embodiments, the active IR camouflage device may also include a second metal layer between the base layer and the first dielectric layer.


Find Patent Forward Citations

Loading…