The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2023

Filed:

Dec. 21, 2020
Applicant:

Research & Business Foundation Sungkyunkwan University, Suwon-si, KR;

Inventors:

Hyungkoun Cho, Suwon-si, KR;

Youngbeen Kim, Ansan-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C25B 9/65 (2021.01); C25B 1/55 (2021.01); C25B 9/17 (2021.01); C25B 11/052 (2021.01); C25B 11/061 (2021.01); C25B 11/091 (2021.01); C23C 14/24 (2006.01); C23C 14/16 (2006.01); C23C 14/58 (2006.01); C23C 14/06 (2006.01); C25B 1/04 (2021.01); C25B 9/50 (2021.01); C25B 11/087 (2021.01); C25D 5/50 (2006.01); C23C 28/00 (2006.01); C01B 19/00 (2006.01);
U.S. Cl.
CPC ...
C25B 9/65 (2021.01); C01B 19/002 (2013.01); C23C 14/0623 (2013.01); C23C 14/16 (2013.01); C23C 14/24 (2013.01); C23C 14/5806 (2013.01); C23C 28/322 (2013.01); C23C 28/34 (2013.01); C25B 1/04 (2013.01); C25B 1/55 (2021.01); C25B 9/17 (2021.01); C25B 9/50 (2021.01); C25B 11/052 (2021.01); C25B 11/061 (2021.01); C25B 11/087 (2021.01); C25B 11/091 (2021.01); C25D 5/50 (2013.01); C01P 2006/40 (2013.01);
Abstract

The present disclosure relates to a hydrogen evolution apparatus including an AC power source, a semiconductor electrode and a counter electrode connected to the AC power source, an electrolyte in which the semiconductor electrode is immersed, and a light source which irradiates light on the semiconductor electrode, in which the semiconductor electrode includes a conductive substrate and n-type semiconductor particles dispersed on a p-type semiconductor matrix or p-type semiconductor particles dispersed on an n-type semiconductor matrix which is vertically grown from the conductive substrate.


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