The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2023

Filed:

Jun. 21, 2018
Applicants:

Uacj Corporation, Tokyo, JP;

Sumitomo Chemical Company, Limited, Tokyo, JP;

Inventors:

Hiroki Takeda, Aichi, JP;

Masahiro Fujita, Ehime, JP;

Assignees:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/34 (2006.01); C23C 14/34 (2006.01); C22F 1/04 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3414 (2013.01); C22F 1/04 (2013.01); H01J 37/3426 (2013.01);
Abstract

A sputtering-target material () is composed of aluminum having a purity of 99.999 mass % or higher and unavoidable impurities. When an average crystal-grain diameter at the plate surface () is given as D[μm], an average crystal-grain diameter at a depth of ¼of the plate thickness () is given as D[μm], and an average crystal-grain diameter at a depth of ½ of the plate thickness () is given as D[μm], the formulas below are satisfied, and the average crystal-grain diameter changes continuously in a plate-thickness direction.≤230≤280≤3001.2≤1.3≤


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