The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 28, 2023

Filed:

May. 04, 2020
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Noelia Vico Trivino, Zurich, CH;

Kirsten Emilie Moselund, Rueschlikon, CH;

Markus Scherrer, Zurich, CH;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/32 (2006.01); H01S 5/02 (2006.01); H01L 21/205 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01S 5/32 (2013.01); H01L 21/02164 (2013.01); H01L 21/02647 (2013.01); H01L 21/2056 (2013.01); H01L 21/30604 (2013.01); H01S 5/0217 (2013.01); H01S 2304/04 (2013.01);
Abstract

The invention relates to a method for fabricating a semiconductor structure. The method comprises fabricating a photonic crystal structure of a first material, in particular a first semiconductor material and selectively removing the first material within a predefined part of the photonic crystal structure. The method further comprises replacing the first material within the predefined part of the photonic crystal structure with one or more second materials by selective epitaxy. The one or more second materials may be in particular semiconductor materials. The invention further relates to devices obtainable by such a method.


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