The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 28, 2023

Filed:

Jan. 17, 2019
Applicant:

Shangrao Jinko Solar Technology Development Co., Ltd, Jiangxi Province, CN;

Inventors:

Jungmin Ha, Seoul, KR;

Sungjin Kim, Seoul, KR;

Juhwa Cheong, Seoul, KR;

Junyong Ahn, Seoul, KR;

Hyungwook Choi, Seoul, KR;

Wonjae Chang, Seoul, KR;

Jaesung Kim, Seoul, KR;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/0747 (2012.01); H01L 31/02 (2006.01); H01L 31/0368 (2006.01); H01L 31/077 (2012.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/022433 (2013.01); H01L 31/0201 (2013.01); H01L 31/02167 (2013.01); H01L 31/02168 (2013.01); H01L 31/022425 (2013.01); H01L 31/03685 (2013.01); H01L 31/077 (2013.01); H01L 31/0747 (2013.01); H01L 31/1824 (2013.01); H01L 31/1864 (2013.01); H01L 31/1868 (2013.01); Y02E 10/50 (2013.01);
Abstract

A solar cell can include a silicon semiconductor substrate; an oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer; a diffusion region at a second surface of the silicon semiconductor substrate; a dielectric film on the polysilicon layer; a first electrode connected to the polysilicon layer through the dielectric film; a passivation film on the diffusion region; and a second electrode connected to the diffusion region through the passivation film.


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