The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2023
Filed:
Nov. 28, 2018
Applicant:
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Inventors:
Shunpei Yamazaki, Tokyo, JP;
Takuya Handa, Tochigi, JP;
Yasuharu Hosaka, Tochigi, JP;
Shota Sambonsuge, Chiba, JP;
Yasumasa Yamane, Kanagawa, JP;
Kenichi Okazaki, Tochigi, JP;
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 29/24 (2013.01);
Abstract
A semiconductor device with improved reliability is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a third oxide over the second oxide, and an insulator over the third oxide. The second oxide contains In, an element M (M is Al, Ga, Y, or Sn), and Zn. The first oxide and the third oxide each include a region whose In concentration is lower than that in the second oxide.