The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2023
Filed:
Sep. 28, 2017
Applicant:
Mitsui Mining & Smelting Co., Ltd., Tokyo, JP;
Inventors:
Assignee:
MITSUI MINING & SMELTING CO., LTD., Tokyo, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01B 1/08 (2006.01); C04B 35/01 (2006.01); C23C 14/08 (2006.01); H01L 29/786 (2006.01); C04B 35/453 (2006.01); C23C 14/34 (2006.01); C01G 15/00 (2006.01); C01G 41/00 (2006.01); C04B 35/495 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); C01G 15/00 (2013.01); C01G 41/00 (2013.01); C01G 41/006 (2013.01); C04B 35/01 (2013.01); C04B 35/453 (2013.01); C04B 35/495 (2013.01); C23C 14/08 (2013.01); C23C 14/34 (2013.01); H01B 1/08 (2013.01); C01P 2002/74 (2013.01); C01P 2002/85 (2013.01); C01P 2004/51 (2013.01); C01P 2004/54 (2013.01); C01P 2004/61 (2013.01); C04B 2235/3258 (2013.01); C04B 2235/3284 (2013.01); C04B 2235/3286 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/786 (2013.01); C04B 2235/788 (2013.01); C04B 2235/80 (2013.01);
Abstract
The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor deviceincluding an oxide semiconductor filmformed using the oxide sintered material.