The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2023
Filed:
Apr. 08, 2020
Hefei Xinsheng Optoelectronics Technology Co., Ltd., Anhui, CN;
Boe Technology Group Co., Ltd., Beijing, CN;
Yingbin Hu, Beijing, CN;
Ce Zhao, Beijing, CN;
Yuankui Ding, Beijing, CN;
Wei Song, Beijing, CN;
Liusong Ni, Beijing, CN;
Xuechao Sun, Beijing, CN;
Chaowei Hao, Beijing, CN;
Liangchen Yan, Beijing, CN;
HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., Anhui, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Abstract
The disclosure provides a thin film transistor, a manufacturing method thereof, a display substrate and a display apparatus. The thin film transistor comprises a base substrate, and an active layer disposed on the base substrate, and the active layer comprises a channel region, and a source contact region and a drain contact region respectively positioned at two sides of the channel region; and a portion of at least one of the source contact region and the drain contact region close to the channel region includes a plurality of first sub-grooves disposed at a side of the active layer proximal to the base substrate and a plurality of second sub-grooves disposed at a side of the active layer distal to the base substrate, and the plurality of first sub-grooves and the plurality of second sub-grooves being alternately disposed along a direction parallel to an extension of the channel region.