The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 28, 2023

Filed:

Apr. 26, 2021
Applicant:

Shanghai Huali Microelectronics Corporation, Shanghai, CN;

Inventor:

Tianzhi Zhu, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/747 (2006.01); H01L 29/74 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0619 (2013.01); H01L 29/66371 (2013.01); H01L 29/66386 (2013.01); H01L 29/66393 (2013.01); H01L 29/747 (2013.01); H01L 29/7412 (2013.01); H01L 29/7436 (2013.01);
Abstract

The present disclosure provides a silicon controlled rectifier and a manufacturing method thereof. The silicon controlled rectifier comprises: an N-type well, an upper portion of which is provided with a P-type heavily doped regionand an N-type heavily doped region; an N-type well, an upper portion of which is provided with a P-type heavily doped regionand an N-type heavily doped region; and a P-type wellconnecting the N-type welland, an upper portion of which is provided with a P-type heavily doped region; wherein a first electrode structure is in mirror symmetry with a second electrode structure with respect to the P-type heavily doped region, and active regions of the N-type wellandare respectively provided between the P-type heavily doped regionand each of the N-type heavily doped regionand


Find Patent Forward Citations

Quick Actions:

Zhu, Tianzhi. (2023). Silicon controlled rectifier and method for making the same (U.S. Patent No. 11616121). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11616121

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…