logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11610996 B1

PDFFull Text
Date of Patent:
Mar. 21, 2023

Filed:

Mar. 22, 2021

Semiconductor structure and method of forming the same

Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Sheng-Fu Huang, New Taipei, TW;

Chung-Hsun Huang, Taoyuan, TW;

Assignee:

NANYA TECHNOLOGY CORPORATION, New Taipei, TW;

Attorney:

JCIPRNET

Primary Examiner:

Mark V Prenty

Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 21/285 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78609 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/0337 (2013.01); H01L 21/28518 (2013.01); H01L 21/31111 (2013.01); H01L 21/76897 (2013.01); H01L 29/4908 (2013.01); H01L 29/4933 (2013.01); H01L 29/665 (2013.01); H01L 29/66742 (2013.01);
Abstract

A semiconductor structure and a method of forming the same are provided. In the semiconductor structure, contact spacers are formed at least on sidewalls of contact trenches in the substrate, so that the distance between the gate and the silicide layers disposed only on the bottom surfaces, rather than on the sidewalls and the bottom surfaces, of the contact trenches can be increased, and thus the current leakage induced by gate can be decreased.

Find Patent Forward Citations

Huang, Sheng-Fu. (2023). Semiconductor structure and method of forming the same (U.S. Patent No. 11610996). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11610996

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…