The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 2023

Filed:

Sep. 28, 2021
Applicant:

Fuji Electric Co., Ltd., Kawasaki, JP;

Inventor:

Keiji Okumura, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/739 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/16 (2006.01); H01L 29/745 (2006.01); H01L 21/04 (2006.01); H01L 29/06 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1095 (2013.01); H01L 29/083 (2013.01); H01L 29/0865 (2013.01); H01L 29/1608 (2013.01); H01L 29/417 (2013.01); H01L 29/4236 (2013.01); H01L 29/66068 (2013.01); H01L 29/66348 (2013.01); H01L 29/7397 (2013.01); H01L 29/745 (2013.01); H01L 29/7806 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 21/047 (2013.01); H01L 21/049 (2013.01); H01L 21/0465 (2013.01); H01L 21/0475 (2013.01); H01L 29/045 (2013.01); H01L 29/0696 (2013.01);
Abstract

An insulated-gate semiconductor device, which has trenches arranged in a chip structure, the trenches defining both sidewalls in a first and second sidewall surface facing each other, includes: a first unit cell including a main-electrode region in contact with a first sidewall surface of a first trench, a base region in contact with a bottom surface of the main-electrode region and the first sidewall surface, a drift layer in contact with a bottom surface of the base region and the first sidewall surface, and a gate protection-region in contact with the second sidewall surface and a bottom surface of the first trench; and a second unit cell including an operation suppression region in contact with a first sidewall surface and a second sidewall surface of a second trench, wherein the second unit cell includes the second trench located at one end of an array of the trenches.


Find Patent Forward Citations

Okumura, Keiji. (2023). Insulated-gate semiconductor device (U.S. Patent No. 11610969). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11610969

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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