The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 2023

Filed:

Feb. 12, 2021
Applicant:

Sony Corporation, Tokyo, JP;

Inventor:

Naoto Sasaki, Kanagawa, JP;

Assignee:

SONY CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/31 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H04N 5/365 (2011.01); H04N 5/3745 (2011.01); H04N 5/376 (2011.01); H04N 5/378 (2011.01); H01L 23/525 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14636 (2013.01); H01L 21/76831 (2013.01); H01L 21/76898 (2013.01); H01L 23/3114 (2013.01); H01L 23/481 (2013.01); H01L 23/528 (2013.01); H01L 23/53295 (2013.01); H01L 27/14618 (2013.01); H01L 27/14683 (2013.01); H04N 5/3658 (2013.01); H04N 5/378 (2013.01); H04N 5/3765 (2013.01); H04N 5/37455 (2013.01); H01L 23/525 (2013.01); H01L 2224/13 (2013.01);
Abstract

The present disclosure relates to a semiconductor element, a manufacturing method of a semiconductor element, and an electronic apparatus, which enable suppression of crack occurrences and leaks. The present technology has a laminated structure including an insulating film having a CTE value between those of metal and Si and disposed under a metal wiring, and P—SiO (1 μm) having good coverage and disposed as a via inner insulating film in a TSV side wall portion. As the insulating film having a CTE that is in the middle between those of metal and Si, for example, SiOC is used with a thickness of 0.1 μm and 2 μm respectively in the via inner insulating film and a field top insulating film continuous to the via inner insulating film. The present disclosure can be applied to, for example, a solid-state imaging element used in an imaging device.


Find Patent Forward Citations

Loading…