The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 2023

Filed:

Jun. 18, 2020
Applicant:

Tower Partners Semiconductor Co., Ltd., Toyama, JP;

Inventors:

Hiroshige Hirano, Nara, JP;

Hiroaki Kuriyama, Toyama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 41/35 (2023.01); H10B 41/10 (2023.01); H01L 27/11524 (2017.01); H01L 27/11519 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11524 (2013.01); H01L 27/11519 (2013.01);
Abstract

First and second memory cells are arranged on a semiconductor substrate. The memory cell includes, between a first or second source region and a first or second drain, a configuration in which a first or second selection gate and a first or second floating gate are arranged in series. The first memory cell and the second memory cell are adjacent to each other in a first direction. A first signal line extending in the first direction and connected to the first and second selection gates is further provided. The first and second source regions are configured to share a first region. The first selection gate extends in a direction different from the first direction.


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