The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2023
Filed:
Jun. 15, 2021
Nanya Technology Corporation, New Taipei, TW;
Yuan-Yuan Lin, Taoyuan, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Abstract
The present application provides a memory cell, a memory array and a method for preparing the memory cell. The memory cell includes an active area, an isolation structure and a contact enhancement layer. The active area is a surface portion of a semiconductor substrate. A top surface of the active area has a slop part descending toward an edge of the active area within a peripheral region of the active area. The isolation structure is formed in a trench of the semiconductor substrate laterally surrounding the active area. The contact enhancement layer covers the edge of the active area and in lateral contact with the isolation structure. The slope part of the top surface of the active area is covered by the contact enhancement layer, and the contact enhancement layer is formed of a semiconductor material.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile