The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2023
Filed:
Mar. 19, 2021
Infineon Technologies Austria Ag, Villach, AT;
Andreas Kitzler, Villach, AT;
John Cooper, Villach, AT;
Jakob Simon Dohr, Villach, AT;
Michael Knabl, Finkenstein, AT;
Matic Krivec, Villach, AT;
Daniel Pieber, Arnoldstein, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A method of processing a semiconductor wafer includes: forming a first metal layer or metal layer stack on a backside of the semiconductor wafer; forming a plating preventative layer on the first metal layer or metal layer stack, the plating preventative layer being formed at least over a kerf region of the semiconductor wafer and such that part of the first metal layer or metal layer stack is uncovered by the plating preventative layer, wherein the kerf region defines an area for dividing the semiconductor wafer along the kerf region into individual semiconductor dies; and plating a second metal layer or metal layer stack on the part of the first metal layer or metal layer stack uncovered by the plating preventative layer, wherein the plating preventative layer prevents plating of the second metal layer or metal layer stack over the kerf region.