The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2023
Filed:
Jun. 02, 2021
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Eunhyang Park, Daegu, KR;
Jinyoung Kim, Seoul, KR;
Jisang Lee, Iksan-si, KR;
Sehwan Park, Yongin-si, KR;
Ilhan Park, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G11C 29/42 (2006.01); G11C 29/44 (2006.01); G11C 16/34 (2006.01); G11C 16/04 (2006.01); G11C 29/12 (2006.01);
U.S. Cl.
CPC ...
G11C 29/42 (2013.01); G11C 16/0433 (2013.01); G11C 16/26 (2013.01); G11C 16/3495 (2013.01); G11C 29/44 (2013.01); G11C 2029/1202 (2013.01); G11C 2029/1204 (2013.01);
Abstract
A reading method for a non-volatile memory device, includes performing a normal read operation using a default read level in response to a first read command; and performing a read operation using a multiple on-chip valley search (OVS) sensing operation in response to a second read command, when read data read in the normal read operation are uncorrectable.
Park, Eunhyang. (2023). Non-volatile memory device, storage device having the same, and reading method thereof (U.S. Patent No. 11610639). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11610639
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile