The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 2023

Filed:

Apr. 27, 2020
Applicant:

Samsung Sdi Co., Ltd., Yongin-si, KR;

Inventors:

Jaehyun Kim, Yongin-si, KR;

Kyung Soo Moon, Yongin-si, KR;

Seungyong Chae, Yongin-si, KR;

Ran Namgung, Yongin-si, KR;

Seung Han, Yongin-si, KR;

Assignee:

Samsung SDI Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01); C07F 7/22 (2006.01); H01L 21/027 (2006.01); H01L 21/308 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0042 (2013.01); C07F 7/2224 (2013.01); H01L 21/0274 (2013.01); H01L 21/3081 (2013.01); G03F 7/20 (2013.01);
Abstract

A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, an organometallic compound represented by Chemical Formula 2, and a solvent, and a method of forming patterns using the same. When the semiconductor photoresist composition is irradiated with e.g., extreme ultraviolet light, radical crosslinking between Sn-containing units may occur via Sn—O—Sn bond formation, and a photoresist polymer providing excellent sensitivity, small or reduced line edge roughness, and/or excellent resolution may be formed.


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