The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 2023

Filed:

Nov. 18, 2020
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Siyuan Qi, East Grinstead, GB;

Joachim Eder, Oberhaching, DE;

Christoph Glacer, Munich, DE;

Dominic Maier, Pleystein, DE;

Mark Pavier, Felbridge, GB;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/17 (2006.01); B81B 3/00 (2006.01); B81B 7/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
G01N 21/1702 (2013.01); B81B 3/0029 (2013.01); B81B 7/0067 (2013.01); B81C 1/00317 (2013.01); B81B 2201/0214 (2013.01); B81C 2203/032 (2013.01); G01N 2021/1704 (2013.01);
Abstract

The present disclosure concerns an emitter package for a photoacoustic sensor, the emitter package comprising a MEMS infrared radiation source for emitting pulsed infrared radiation in a first wavelength range. The MEMS infrared radiation source may be arranged on a substrate. The emitter package may further comprise a rigid wall structure being arranged on the substrate and laterally surrounding a periphery of the MEMS infrared radiation source. The emitter package may further comprise a lid structure being attached to the rigid wall structure, the lid structure comprising a filter structure for filtering the infrared radiation emitted from the MEMS infrared radiation source and for providing a filtered infrared radiation in a reduced second wavelength range.


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