The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2023
Filed:
May. 03, 2021
Applicant:
Hamilton Sundstrand Corporation, Charlotte, NC (US);
Inventors:
Assignee:
HAMILTON SUNDSTRAND CORPORATION, Charlotte, NC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 3/00 (2006.01); H03K 17/082 (2006.01); H02H 1/00 (2006.01); H03K 5/01 (2006.01); H03K 5/00 (2006.01);
U.S. Cl.
CPC ...
H03K 17/0822 (2013.01); H02H 1/0007 (2013.01); H03K 5/01 (2013.01); H03K 2005/00078 (2013.01);
Abstract
A desaturation protection circuit is provided. Aspects includes a main gate driver circuit driving a gate for a switch, a desaturation gate driver circuit coupled to a drain terminal of the switch, a PWM signal supply circuit configured to supply a PWM signal to the desaturation gate driver circuit, and a delay circuit, the delay circuit configured to delay the PWM signal from the PWM signal supply circuit to the desaturation gate driver circuit during a turn-on event for the switch.
Liu, Bo. (2023). Desaturation circuit for mosfet with high noise immunity and fast detection (U.S. Patent No. 11606086). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11606086
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile