The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 14, 2023

Filed:

Dec. 28, 2021
Applicant:

Fujifilm Corporation, Tokyo, JP;

Inventors:

Eijiro Iwase, Kanagawa, JP;

Akihito Fukunaga, Kanagawa, JP;

Takehiko Nakayama, Kanagawa, JP;

Koji Tonohara, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/04 (2006.01); H01M 10/0525 (2010.01); H01M 4/02 (2006.01); B05D 1/26 (2006.01); B05C 5/02 (2006.01); B29C 41/28 (2006.01);
U.S. Cl.
CPC ...
H01M 4/0411 (2013.01); H01M 10/0525 (2013.01); B05C 5/0254 (2013.01); B05D 1/26 (2013.01); B05D 1/265 (2013.01); B29C 41/28 (2013.01); H01M 2004/021 (2013.01);
Abstract

A method of manufacturing a formed body for an electrode includes: preparing an electrode material; placing a shape retaining member having an rectangular tubular shape with one opening portion L thereof facing down, and supplying the electrode material into the shape retaining member from the other opening portion M thereof; and discharging the electrode material onto a support from the opening portion L while relatively moving the opening portion L and the support, to form a film, a bulk density Dof the electrode material in the first step and a bulk density Dof the electrode material at the opening portion L satisfying a relationship of D/D=1.1 to 30, and a width Tof the opening portion L in a short side direction and a distance Tbetween the end portion X of the opening portion L and the support satisfying a relationship of width T>distance T.


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