The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 14, 2023

Filed:

Jan. 18, 2019
Applicant:

Glo Ab, Lund, SE;

Inventors:

Steven Konsek, Alexandria, VA (US);

Jonas Ohlsson, Malmo, SE;

Yourii Martynov, Geldrop, NL;

Peter Jesper Hanberg, Soborg, DK;

Assignee:

NANOSYS, INC., Milpitas, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/08 (2010.01); B82Y 20/00 (2011.01); H01L 33/24 (2010.01); F21S 41/153 (2018.01); H01L 33/60 (2010.01); H01L 33/62 (2010.01); H01L 27/15 (2006.01); H01L 33/20 (2010.01); H01L 33/32 (2010.01); H01L 33/38 (2010.01); H01L 33/40 (2010.01); F21Y 105/10 (2016.01); F21Y 115/10 (2016.01); H01L 33/18 (2010.01); F21S 41/663 (2018.01);
U.S. Cl.
CPC ...
H01L 33/08 (2013.01); B82Y 20/00 (2013.01); F21S 41/153 (2018.01); H01L 33/24 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); F21S 41/663 (2018.01); F21Y 2105/10 (2016.08); F21Y 2115/10 (2016.08); H01L 27/153 (2013.01); H01L 27/156 (2013.01); H01L 33/18 (2013.01); H01L 33/20 (2013.01); H01L 33/32 (2013.01); H01L 33/38 (2013.01); H01L 33/40 (2013.01); H01L 2924/0002 (2013.01); Y10S 977/762 (2013.01); Y10S 977/95 (2013.01);
Abstract

The device according to the invention comprises a nanostructured LED with a first group of nanowires protruding from a first area of a substrate and a contacting means in a second area of the substrate. Each nanowire of the first group of nanowires comprises a p-i-n-junction and a top portion of each nanowire or at least one selection of nanowires is covered with a light-reflecting contact layer. The contacting means of the second area is in electrical contact with the bottom of the nanowires, the light-reflecting contact layer being in electrical contact with the contacting means of the second area via the p-i-n-junction. Thus when a voltage is applied between the contacting means of the second area and the light-reflecting contact layer, light is generated within the nanowire. On top of the light-reflecting contact layer, a first group of contact pads for flip-chip bonding can be provided, distributed and separated to equalize the voltage across the layer to reduce the average serial resistance.


Find Patent Forward Citations

Loading…