The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2023
Filed:
Sep. 25, 2020
Massachusetts Institute of Technology, Cambridge, MA (US);
Amir H. Atabaki, San Francisco, CA (US);
Rajeev J. Ram, Arlington, MA (US);
Ebrahim Dakhil Al Johani, Cambridge, MA (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
Photodetectors using photonic crystals (PhCs) in polysilicon film that include an in-plane resonant defect. A biatomic photodetector includes an optical defect mode that is confined from all directions in the plane of the PhC by the photonic bandgap structure. The coupling of the resonance (or defect) mode to out-of-plane radiation can be adjusted by the design of the defect. Further, a 'guided-mode resonance' (GMR) photodetector provides in-plane resonance through a second-order grating effect in the PhC. Absorption of an illumination field can be enhanced through this resonance.