The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2023
Filed:
Oct. 09, 2020
Applicant:
California Institute of Technology, Pasadena, CA (US);
Inventors:
John M. Gregoire, Sierra Madre, CA (US);
Santosh Suram, Mountain View, CA (US);
Lan Zhou, Pasadena, CA (US);
Aniketa A. Shinde, Duarte, CA (US);
Assignee:
California Institute of Technology, Pasadena, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/032 (2006.01); C04B 35/495 (2006.01);
U.S. Cl.
CPC ...
H01L 31/032 (2013.01); C04B 35/495 (2013.01); C04B 2235/326 (2013.01); C04B 2235/3298 (2013.01);
Abstract
A composition of matter includes an n-type semiconductor. At least a portion of the semiconductor has the crystal structure of the chemical compound represented by FeWO. The portion of the semiconductor having the crystal structure of FeWOincludes iron and tungsten. A photoanode can have a light-absorbing layer that includes or consists of the semiconductor. A solar fuels generator can include the photoanode.