The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 14, 2023

Filed:

May. 18, 2020
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Lizhong Wang, Beijing, CN;

Tianmin Zhou, Beijing, CN;

Hehe Hu, Beijing, CN;

Shuilang Dong, Beijing, CN;

Wenhua Wang, Beijing, CN;

Nianqi Yao, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02178 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 29/4908 (2013.01); H01L 29/66969 (2013.01);
Abstract

An oxide thin film transistor includes an oxide active layer, a first loose layer and a first oxygen release layer. The first loose layer is at least disposed on a first surface of the oxide active layer perpendicular to a thickness direction of the oxide active layer, and is in contact with the oxide active layer. A material of the first loose layer includes a first inorganic oxide insulating material. The first oxygen release layer is disposed on a surface of the first loose layer facing away from the oxide active layer, and is in contact with the first loose layer. A material of the first oxygen release layer is a first oxygen-containing insulating material.


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