The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2023
Filed:
Jan. 05, 2022
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventor:
Tsung-Yu Tsai, New Taipei, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); G11C 5/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7812 (2013.01); G11C 5/063 (2013.01); H01L 29/0653 (2013.01);
Abstract
The present disclosure provides a method of manufacturing a semiconductor device. The method includes steps of providing a patterned mask having a plurality of openings on a substrate; etching the substrate through the openings to form an etched substrate and a trench in the etched substrate, wherein the etched substrate comprises a protrusion; introducing dopants having a first conductivity type in the etched substrate and on either side of the trench to form a plurality of first impurity regions; forming an isolation film in the trench; and depositing a conductive material on the isolation film.