The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 14, 2023

Filed:

Jul. 08, 2021
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventor:

Matthew David Smith, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/518 (2013.01); H01L 29/41775 (2013.01); H01L 29/4966 (2013.01); H01L 29/7786 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes a first semiconductor region, a first electrode, and a first insulating member. The first semiconductor region includes AlGaN (0≤z1<1). The first semiconductor region includes a first partial region. The first insulating member includes a first insulating portion between the first partial region and the first electrode. The first insulating portion includes a first insulating region and a second insulating region. The second insulating region is provided between the first insulating region and the first electrode. The first insulating region includes AlSiO (x1<0.5). The second insulating region includes AlSiO (0.5<x2).


Find Patent Forward Citations

Smith, Matthew. (2023). Semiconductor device (U.S. Patent No. 11605724). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11605724

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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