The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11605721 B1

Date of Patent:

Mar. 14, 2023

Filed:

Aug. 30, 2020

Sputtering electrode with multiple metallic-layer structure for semiconductor device and method for producing same

Applicants:

Kaixuan Shi, Shenzhen, CN;

Haodian Shi, Shenzhen, CN;

Yanqing Wu, Shenzhen, CN;

Anping HU, Shenzhen, CN;

Xibei Yu, Shenzhen, CN;

Inventors:

Kaixuan Shi, Shenzhen, CN;

Haodian Shi, Shenzhen, CN;

Yanqing Wu, Shenzhen, CN;

Anping Hu, Shenzhen, CN;

Xibei Yu, Shenzhen, CN;

Assignee:

Other;

Attorney:

Primary Examiner:

Wasiul Haider

Int. Cl.

CPC ...

H01L 29/45 (2006.01); H01L 21/443 (2006.01); H01L 29/22 (2006.01); H01L 29/93 (2006.01); C23C 14/35 (2006.01); C23C 14/18 (2006.01); C22C 21/00 (2006.01); H01C 7/00 (2006.01); C22C 19/05 (2006.01); C22C 14/00 (2006.01);

U.S. Cl.

CPC ...

H01L 29/45 (2013.01); C23C 14/18 (2013.01); C23C 14/35 (2013.01); H01L 21/443 (2013.01); H01L 29/22 (2013.01); H01L 29/93 (2013.01); C22C 14/00 (2013.01); C22C 19/05 (2013.01); C22C 21/00 (2013.01); H01C 7/008 (2013.01);

Abstract

An electrode with multiple metallic-layers structure formed by a magnetron sputtering technique for a semiconductor device and method for producing same is disclosed. The ceramic device includes at least one from selected group consisting of ZnO-MOV (metal oxide varistors), BaTiO3-PTC (positive temperature coefficient) thermistors, Mn3O4-NTC (negative temperature coefficient) thermistors, and capacitors. The multiple metallic-layers include a sputtered buffer layer and a sputtered electrical contact layer. The buffer layer includes at least one alloy selected form group consisting of NiCr (Ni from 50-90 wt %), TiNi (Ti from 40-60 wt %), and AlNi (Al from 40-70 wt %) and the thickness of this layer is from greater than zero to less than 100 nm. The electrical contact layer includes at least one of Cu, Ag, Pt, Au, or combination. More specifically, the electrode includes one of NiCr/Cu system, NiCr/Ag system, NiCr/Cu/Ag system, TiNi/Cu/Ag system, or AlNi/Cu/Ag system. The thickness ratio of the electrical contact layer to the intermetallic barrier layer is from 1 to 4.

Find Patent Forward Citations

Shi, Kaixuan. (2023). Sputtering electrode with multiple metallic-layer structure for semiconductor device and method for producing same (U.S. Patent No. 11605721). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11605721

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile