The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2023
Filed:
Nov. 11, 2020
Coorstek Kk, Tokyo, JP;
Hiroshi Oishi, Hadano, JP;
Jun Komiyama, Hadano, JP;
Yoshihisa Abe, Hadano, JP;
Kenichi Eriguchi, Hadano, JP;
COORSTEK KK, Tokyo, JP;
Abstract
The present invention provides a nitride semiconductor substrate suitable for a high frequency device. The nitride semiconductor substrate has a substrate, a buffer layer made of group 13 nitride semiconductors, and an active layer made of group 13 nitride semiconductors in this order, wherein the substrate is composed of a first substrate made of polycrystalline aluminum nitride, and a second substrate made of Si single crystal having a specific resistance of 100 Ω·cm or more, formed on the first substrate, the average particle size of AlN constituting the first substrate is 3 to 9 μm, and preferably, the second substrate grown by the MCZ method has an oxygen concentration of 1E+18 to 9E+18 atoms/cmand a specific resistance of 100 to 1000 Ω·cm.