The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2023
Filed:
Mar. 14, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Dong Kak Lee, Hwaseong-si, KR;
Min Woo Kim, Hwaseong-si, KR;
Bong Hyun Kim, Hwaseong-si, KR;
Hee Young Park, Hwaseong-si, KR;
Seo Jin Ahn, Hwaseong-si, KR;
Won Yong Lee, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A semiconductor device includes a trench defining an active region in a substrate, a first insulating layer on a bottom surface and side surfaces of the active region inside the trench, a shielding layer on a surface of the first insulating layer, the shielding layer including a plurality of spaced apart particles, a second insulating layer on the shielding layer and having first charge trapped therein, the plurality of spaced apart particles being configured to concentrate second charge having an opposite polarity to the charge trapped in the second insulating layer, and a gap-fill insulating layer on the second insulating layer in the trench.