The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2023
Filed:
Mar. 10, 2021
Kioxia Corporation, Tokyo, JP;
Daisuke Ikeno, Yokkaichi, JP;
Akihiro Kajita, Yokkaichi, JP;
Kioxia Corporation, Tokyo, JP;
Abstract
A semiconductor memory device according to an embodiment includes a semiconductor substrate, a first insulating layer, a second insulating layer, the first insulating layer between the semiconductor substrate and the second insulating layer, a semiconductor layer between the first insulating layer and the second insulating layer, the semiconductor layer extending in a first direction parallel to a surface of the semiconductor substrate, a gate electrode layer extending in a direction perpendicular to the surface; a first insulating film between the semiconductor layer and the gate electrode layer, a second insulating film between the first insulating film and the gate electrode layer the second insulating film in contact with the first insulating layer and the second insulating layer, a polycrystalline silicon region between the first insulating film and the second insulating film; and a metal film between the polycrystalline silicon region and the second insulating film containing titanium and silicon.