The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 14, 2023

Filed:

Mar. 11, 2021
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Inventor:

Tomohiro Iguchi, Himeji Hyogo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01); H01L 27/07 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0655 (2013.01); H01L 23/49811 (2013.01); H01L 23/538 (2013.01); H01L 24/48 (2013.01); H01L 27/0727 (2013.01); H01L 2224/48175 (2013.01); H01L 2924/1207 (2013.01); H01L 2924/12032 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/182 (2013.01); H01L 2924/186 (2013.01);
Abstract

According to an embodiment, provided is a semiconductor device includes an insulating substrate; a first main terminal; a second main terminal; an output terminal; a first metal layer connected to the first main terminal; a second metal layer connected to the second main terminal; a third metal layer disposed between the first metal layer and the second metal layer and connected to the output terminal; a first semiconductor chip and a second semiconductor chip provided on the first metal layer; and a third semiconductor chip and a fourth semiconductor chip provided on the third metal layer. The second metal layer includes a first slit. Alternatively, the third metal layer includes a second slit.


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