The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2023
Filed:
Nov. 09, 2021
Massachusetts Institute of Technology, Cambridge, MA (US);
Eveline Postelnicu, Somerville, MA (US);
Samarth Aggarwal, Ghaziabad, IN;
Kazumi Wada, Lexington, MA (US);
Jurgen Michel, Arlington, MA (US);
Lionel C. Kimerling, Concord, MA (US);
Michelle L. Clark, Pelham, NH (US);
Anuradha M. Agarwal, Weston, MA (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
A layer of amorphous Ge is formed on a substrate using electron-beam evaporation. The evaporation is performed at room temperature. The layer of amorphous Ge has a thickness of at least 50 nm and a purity of at least 90% Ge. The substrate is complementary metal-oxide-semiconductor (CMOS) compatible and is transparent at Long-Wave Infrared (LWIR) wavelengths. The layer of amorphous Ge can be used as a waveguide in chemical sensing and data communication applications. The amorphous Ge waveguide has a transmission loss in the LWIR of 11 dB/cm or less at 8 μm.