The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 14, 2023

Filed:

Dec. 16, 2021
Applicants:

Jennifer Bugayong Luna, Lancaster, NY (US);

Atul M. Athalye, San Marcos, CA (US);

Ce MA, Apex, NC (US);

Ashwini K. Sinha, East Amherst, NY (US);

Inventors:

Jennifer Bugayong Luna, Lancaster, NY (US);

Atul M. Athalye, San Marcos, CA (US);

Ce Ma, Apex, NC (US);

Ashwini K. Sinha, East Amherst, NY (US);

Assignee:

Praxair Technology, Inc., Danbury, CT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01D 53/00 (2006.01); B01D 53/04 (2006.01); B01D 53/14 (2006.01); C01B 23/00 (2006.01);
U.S. Cl.
CPC ...
C01B 23/0094 (2013.01); B01D 53/005 (2013.01); B01D 53/0462 (2013.01); B01D 53/1431 (2013.01); B01D 53/1456 (2013.01); C01B 23/0021 (2013.01); C01B 23/0057 (2013.01); C01B 23/0078 (2013.01); C01B 23/0089 (2013.01); B01D 2253/1122 (2013.01); B01D 2257/11 (2013.01); B01D 2257/2047 (2013.01); B01D 2257/2066 (2013.01); B01D 2257/502 (2013.01); B01D 2257/504 (2013.01); B01D 2257/80 (2013.01); C01B 2210/0004 (2013.01); C01B 2210/005 (2013.01); C01B 2210/0021 (2013.01); C01B 2210/0025 (2013.01); C01B 2210/0035 (2013.01); C01B 2210/0037 (2013.01); C01B 2210/0056 (2013.01); C01B 2210/0068 (2013.01); C01B 2210/0098 (2013.01);
Abstract

Novel methods for pretreating a rare-gas-containing stream exiting an etch chamber followed by recovering the rare gas from the pre-treated, rare-gas containing stream are disclosed. More particularly, the invention relates to the pretreatment and recovery of a rare gas, such as xenon or krypton, from a nitrogen-based exhaust stream with specific gaseous impurities generated during an etch process that is performed as part of a semiconductor fabrication process.


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