The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 07, 2023

Filed:

Sep. 25, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jaeho Jung, Seoul, KR;

Kyoung Sun Kim, Suwon-si, KR;

Jeonghee Park, Hwaseong-si, KR;

Jiho Park, Suwon-si, KR;

Changyup Park, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01J 37/32 (2006.01); H01J 37/34 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1625 (2013.01); H01J 37/32522 (2013.01); H01J 37/32724 (2013.01); H01J 37/32733 (2013.01); H01J 37/3414 (2013.01); H01J 37/3447 (2013.01); H01J 2237/20214 (2013.01); H01J 2237/332 (2013.01); H01L 27/2409 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01);
Abstract

An apparatus of fabricating a semiconductor device may include a chamber including a housing and a slit valve used to open or close a portion of the housing, a heater chuck provided in a lower region of the housing and used to heat a substrate, a target provided over the heater chuck, a plasma electrode provided in an upper region of the housing and used to generate plasma on the target, a heat-dissipation shield surrounding the inner wall of the housing between the plasma electrode and the heater chuck, and an edge heating structure provided between the heat-dissipation shield and the inner wall of the housing and configured to heat the heat-dissipation shield and an edge region of the substrate and to reduce a difference in temperature between center and edge regions of the substrate.


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