The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 07, 2023

Filed:

Nov. 04, 2020
Applicant:

Korea University Research and Business Foundation, Seoul, KR;

Inventors:

Young Keun Kim, Seoul, KR;

Yong Jin Kim, Seoul, KR;

Min Hyeok Lee, Yangsan-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/85 (2023.01); H10B 61/00 (2023.01); H10N 50/80 (2023.01); H10N 50/10 (2023.01); H01F 10/32 (2006.01); H01L 43/10 (2006.01); H01L 27/22 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
H01L 43/10 (2013.01); H01F 10/329 (2013.01); H01L 27/222 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01);
Abstract

A magnetic device includes a pinned layer having a fixed magnetization direction, a free layer having a switched magnetization direction, a tunnel insulating layer interposed between the pinned layer and the free layer, and a spin-torque generation layer injecting spin current into the free layer as in-plane current flows. The spin current allows a magnetization direction of the free layer to be switched by a spin-orbit torque. The pinned layer and the free layer have perpendicular magnetic anisotropy. The spin-torque generation layer includes a tungsten layer and a tungsten-nitride layer sequentially stacked. The tungsten-nitride layer is disposed adjacent to the free layer.


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