The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2023
Filed:
Feb. 01, 2021
Infineon Technologies Austria Ag, Villach, AT;
Ingmar Neumann, Villach, AT;
Michael Hutzler, Villach, AT;
David Laforet, Villach, AT;
Roland Moennich, Klagenfurt, AT;
Ralf Siemieniec, Villach, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
In an embodiment, a transistor device includes a semiconductor substrate having a main surface, a cell field including a plurality of transistor cells, and an edge termination region laterally surrounding the cell field. The cell field includes a gate trench in the main surface of the semiconductor substrate, a gate dielectric lining the gate trench, a metal gate electrode arranged in the gate trench on the gate dielectric, and an electrically insulating cap arranged on the metal gate electrode and within the gate trench.