The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 07, 2023

Filed:

Aug. 23, 2019
Applicant:

Fuji Electric Co., Ltd., Kawasaki, JP;

Inventor:

Takeyoshi Nishimura, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7808 (2013.01); H01L 29/7813 (2013.01);
Abstract

Provided are a semiconductor element and a semiconductor device capable of achieving on-resistance reduction and miniaturization. The semiconductor element is used in a semiconductor switch for protecting an electric circuit, and includes a semiconductor substrate SB, a MOS transistor Tr provided on the semiconductor substrate SB, and a source electrode SE provided on a front surfaceside of the semiconductor substrate SB. The MOS transistor Tr includes an n-type source regionconnected to the source electrode SE, an n-type drift regionarranged away from the source region, and a p-type well regionarranged between the source regionand the drift region. The source regionis interposed between the source electrode SE and the well region


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