The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2023
Filed:
Jan. 29, 2020
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Masashi Tsubuku, Kanagawa, JP;
Shunpei Yamazaki, Tokyo, JP;
Hidetomo Kobayashi, Kanagawa, JP;
Kazuaki Ohshima, Kanagawa, JP;
Masashi Fujita, Tokyo, JP;
Toshihiko Takeuchi, Kanagawa, JP;
SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Kanagawa-ken, JP;
Abstract
A semiconductor device in which a transistor has the characteristic of low off-state current is provided. The transistor comprises an oxide semiconductor layer having a channel region whose channel width is smaller than 70 nm. A temporal change in off-state current of the transistor over time can be represented by Formula (a2). In Formula (a2), Irepresents the off-state current, t represents time during which the transistor is off, α and τ are constants, β is a constant that satisfies 0<β≤1, and Cis a constant that represents load capacitance of a source or a drain.