logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11600704 B1

PDFFull Text
Date of Patent:
Mar. 07, 2023

Filed:

Apr. 19, 2018

Nitride semiconductor laminate, semiconductor device, method of manufacturing nitride semiconductor laminate, method of manufacturing nitride semiconductor free-standing substrate and method of manufacturing semiconductor device

Applicant:

Sumitomo Chemical Company, Limited, Tokyo, JP;

Inventor:

Hajime Fujikura, Hitachi, JP;

Assignee:

SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo, JP;

Attorney:

Foley & Lardner LLP

Primary Examiner:

Jaehwan Oh

Int. Cl.
CPC ...
H01L 29/36 (2006.01); H01L 29/20 (2006.01); C30B 25/18 (2006.01); C30B 25/20 (2006.01); C30B 29/40 (2006.01); C30B 31/22 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 21/324 (2006.01); H01L 29/66 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); C30B 25/186 (2013.01); C30B 25/20 (2013.01); C30B 29/406 (2013.01); C30B 31/22 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/266 (2013.01); H01L 21/26553 (2013.01); H01L 21/3245 (2013.01); H01L 29/36 (2013.01); H01L 29/66143 (2013.01); H01L 29/872 (2013.01);
Abstract

A nitride semiconductor laminate includes: a substrate comprising a group III nitride semiconductor and including a surface and a reverse surface, the surface being formed from a nitrogen-polar surface, the reverse surface being formed from a group III element-polar surface and being provided on the reverse side from the surface; a protective layer provided at least on the reverse surface side of the substrate and having higher heat resistance than the reverse surface of the substrate; and a semiconductor layer provided on the surface side of the substrate and comprising a group III nitride semiconductor. The concentration of O in the semiconductor layer is lower than 1×10at/cm.

Find Patent Forward Citations

Quick Actions:

Fujikura, Hajime. (2023). Nitride semiconductor laminate, semiconductor device, method of manufacturing nitride semiconductor laminate, method of manufacturing nitride semiconductor free-standing substrate and method of manufacturing semiconductor device (U.S. Patent No. 11600704). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11600704

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…