The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 07, 2023

Filed:

Mar. 01, 2021
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Inventors:

Sozo Kanie, Himeji Hyogo, JP;

Hiroshi Kono, Himeji Hyogo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0623 (2013.01); H01L 29/404 (2013.01);
Abstract

According to one embodiment, a semiconductor device has a cell region and an end region adjacent to the cell region in a first direction and surrounding the cell region. A first semiconductor layer of a first conductivity type is in the cell region and the end region. Guard rings of a second conductivity type are at a first surface in the end region. The guard rings surround the cell region. An insulating film is on the first surface in the end region. Conductive members are on the insulating film and separated from the guard rings in a second direction. A first conductive member has a cell-region-side edge above a central portion of a first guard ring. The first guard ring has an end-region-side edge below a central portion of the first conductive member.


Find Patent Forward Citations

Loading…